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图书 半导体多层膜中的电子和声子(第2版影印版)/引进系列/中外物理学精品书系
内容
目录

Preface

Introduction

1 Simple Models of the Electron-Phonon Interaction

 1.1 General Remarks

 1.2 Early Models of Optical-Phonon Confinement

1.2.1 The Dielectric-Continuum (DC) Model

1.2.2 The Hydrodynamic (HD) Model

1.2.3 The Reformulated-Mode (RM) Model

1.2.4 Hybrid Modes

 1.3 The Interaction of Electrons with Bulk Phonons

1.3.1 The Scattering Rate

1.3.2 The Coupling Coefficients

1.3.3 The Overlap Integral in 2D

1.3.4 The 2D Rates

1.3.5 The ID Rates

 1.4 The Interaction with Model Confined Phonons

2 Quantum Confinement of Carriers

 2.1 The Effective-Mass Equation

2.1.1 Introduction

2.1.2 The Envelope-Function Equation

2.1.3 The Local Approximation

2.1.4 The Effective-Mass Approximation

 2.2 The Confinement of Electrons

 2.3 The Confinement of Holes

 2.4 Angular Dependence of Matrix Elements

 2.5 Non-Parabolicity

 2.6 Band-Mixing

3 Quasi-Continuum Theory of Lattice Vibrations

 3.1 Introduction

 3.2 Linear-Chain Models

3.2.1 Bulk Solutions

3.2.2 Interface between Nearly Matched Media

3.2.3 Interface between Mismatched Media

3.2.4 Free Surface

3.2.5 Summary

 3.3 The Envelope Function

 3.4 Non-Local Operators

 3.5 Acoustic and Optical Modes

 3.6 Boundary Conditions

 3.7 Interface Model

 3.8 Summary

 Appendix: The Local Approximation

4 Bulk Vibrational Modes in an Isotropic Continuum

 4.1 Elasticity Theory

 4.2 Polar Material

 4.3 Polar Optical Waves

 4.4 Energy Density

 4.5 Two-Mode Alloys

5 Optical Modes in a Quantum Well

 5.1 Non-Polar Material

 5.2 Polar Material

 5.3 Barrier Modes: Optical-Phonon Tunnelling

 5.4 The Effect of Dispersion

 5.5 Quantization of Hybrid Modes

6 Superlattice Modes

 6.1 Superlattice Hybrids

 6.2 Superlattice Dispersion

 6.3 General Features

 6.4 Interface Polaritons in a Superlattice

 6.5 The Role of LO and TO Dispersion

 6.6 Acoustic Phonons

7 Optical Modes in Various Structures

 7.1 Introduction

 7.2 Monolayers

7.2.1 Single Monolayer

7.2.2 Double Monolayer

 7.3 Metal-Semiconductor Structures

 7.4 Slab Modes

 7.5 Quantum Wires

 7.6 Quantum Dots

8 Electron-Optical Phonon Interaction in a Quantum Well

 8.1 Introduction

 8.2 Scattering Rate

 8.3 Scattering Potentials for Hybrids

 8.4 Matrix Elements for an Indefinitely Deep Well

 8.5 Scattering Rates for Hybrids

 8.6 Threshold Rates

 8.7 Scattering by Barrier LO Modes

 8.8 Scattering by Interface Polaritons

 8.9 Summary of Threshold Rates in an Indefinitely Deep Well

8.9.1 Intrasubband Rates

8.9.2 Intersubband Rates

 8.10 Comparison with Simple Models

 8.11 The Interaction in a Superlattice

 8.12 The Interaction in an Alloy

 8.13 Phonon Resonances

 8.14 Quantum Wire

 8.15 The Sum-Rule

 Appendix: Scalar and Vector Potentials

9 Other Scattering Mechanisms

 9.1 Charged-Impurity Scattering

9.1.1 Introduction

9.1.2 The Coulomb Scattering Rate

9.1.3 Scattering by Single Charges

9.1.4 Scattering by Fluctuations in a Donor Array

9.1.5 An Example

 9.2 Interface-Roughness Scattering

 9.3 Alloy Scattering

 9.4 Electron-Electron Scattering

9.4.1 Basic Formulae for the 2D Case

9.4.2 Discussion

9.4.3 Electron-Hole Scattering

 9.5 Phonon Scattering

9.5.1 Phonon-Phonon Processes

9.5.2 Charged-Impurity Scattering

9.5.3 Alloy Fluctuations and Neutral Impurities

9.5.4 Interface-Roughness Scattering

10 Quantum Screening

 10.1  Introduction

 10.2  The Density Matrix

 10.3  The Dielectric Function

 10.4  The 3D Dielectric Function

 10.5  The Quasi-2D Dielectric Function

 10.6  The Quasi-lD Dielectric Function

 10.7  Lattice Screening

 10.8  Image Charges

 10.9  The Electron-Plasma/Coupled-Mode Interaction

 10.10 Discussion

11 The Electron Distribution Function

 11.1 The Boltzmann Equation

 11.2 Net Scattering Rate by Bulk Polar-Optical Phonous

11.3 Optical Excitation

11.4 Transport

11.4.1 The 3D Case

11.4.2 The 2D Case

11.4.3 The ID Case

11.4.4 Discussion

11.5 Acoustic-Phonon Scattering

 11.5.1 The 3D Case

 11.5.2 The 2D Case

 11.5.3 The 1D Case

 11.5.4 Piezoelectric Scattering

11.6 Discussion

11.7 Acoustic-Phonon Scattering in a Degenerate Gas

 11.7.1 Introduction

 11.7.2 Energy- and Momentum-Relaxation Rates

 11.7.3 Low-Temperature Approximation

 11.7.4 The Electron Temperature

 11.7.5 The High-Temperature Approximation

12 Spin Relaxation

 12.1 Introduction

 12.2 The Elliot-Yafet process

 12.3 The D'yakonov-Perel Process

12.3.1 The DP Mechanism in a Quantum Well

12.3.2 Quantum Wires

 12.4 The Rashba Mechanism

 12.5 The Bir-Aranov-Pikus Mechanism

 Appendix 1

 Appendix 2

 Appendix 3

13 Electrons and Phonons in the Wurtzite Lattice

 13.1 The Wurtzite Lattice

 13.2 Energy Band Structure

 13.3 Eigenfunctions

 13.4 Optical Phonons

 13.5 Spontaneous Polarization

 Appendix 1 Symmetry

14 Nitfide Heterostructures

 14.1 Single Heterostructures

 14.2 Piezoelectric Polarization

 14.3 Polarization Model of Passivated HFET with Field Plate

 14.4 The Polarization Superlattice

14.4.1 Strain

14.4.2 Deformation Potentials

14.4.3 Fields

 14.5 The AIN/GaN Superlattice

 14.6 The Quantum-Cascade Laser

 Appendix Airy Functions

15 Terahertz Sources

 15.1 Introduction

 15.2 Bitch Oscillations

 15.3 Negative-Mass NDR

15.3.1 The Esaki-Tsu Approach

15.3.2 Lucky Drift

15.3.3 The Hydrodynamic Model

 15.4 Ballistic Transport

15.4.1 Optical-Phonon-Determined Transit-Time Oscillations

15.4.2 Transit-Time Oscillations in a Short Diode

15.4.3 Negative-Mass NDR

15.4.4 Bloch Oscillations

 15.5 Femtosecond Generators

15.5.1 Optical Non-Linear Rectification.

15.5.2 Surge Current

15.5.3 Dember Diffusion

15.5.4 Coherent Phonons

15.5.5 Photoconductive Switch

15.6 CW Generators

15.6.1  Photomixing

15.6.2 Quantum-Cascade Lasers

Appendix

Appendix 1 The Polar-Optical Momentum-Relaxation Time in a 2D Degenerate Gas

Appendix 2 Electron/Polar Optical Phonon Scattering Rates in a Spherical Cosine Band

References

Index

编辑推荐

纳米技术的发展催生了只有几个分子厚度的半导体结构,这给该结构中电子和声子的物理带来了重要影响。里德利编写的《半导体多层膜中的电子和声子(第2版影印版)》阐述了量子阱和量子线中的电子和声子囚禁对半导体特性的影响。第二版中加入了电子自旋弛豫、六角纤锌晶格、氮化物结构和太赫兹源等方面的内容。本书独特之处在于对光学声子的微观理论的阐述,其由囚禁引起的径向性质改变以及与电子的相互作用等。本书适合半导体物理领域的研究者和研究生阅读。

内容推荐
本书阐述了量子阱和量子线中的电子和声子囚禁对半导体特性的影响。第二版中加入了电子自旋弛豫、六角纤锌晶格、氮化物结构和太赫兹源等方面的内容。
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书名 半导体多层膜中的电子和声子(第2版影印版)/引进系列/中外物理学精品书系
副书名
原作名
作者 (英)里德利
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出版社 北京大学出版社
商品编码(ISBN) 9787301245149
开本 16开
页数 409
版次 1
装订 平装
字数 510
出版时间 2014-08-01
首版时间 2014-08-01
印刷时间 2014-08-01
正文语种
读者对象 青年(14-20岁),普通成人
适用范围
发行范围 公开发行
发行模式 实体书
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图书大类 科学技术-自然科学-物理
图书小类
重量 0.61
CIP核字 2014159594
中图分类号 O484
丛书名 引进系列
印张 26.75
印次 1
出版地 北京
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媒质 图书
用纸 普通纸
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影印版本 原版
出版商国别 CN
是否套装 单册
著作权合同登记号 图字01-2012-4279
版权提供者 Cambridge University Press and Peking University Press
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